1 Ocak 2012 Dergi makalesi Açık Erişim

Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel

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    <subfield code="a">Integrated AlGaN quadruple-band ultraviolet photodetectors</subfield>
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    <subfield code="a">Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.</subfield>
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