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Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd"> <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/87345</identifier> <creators> <creator> <creatorName>Gokkavas, Mutlu</creatorName> <givenName>Mutlu</givenName> <familyName>Gokkavas</familyName> <affiliation>Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</affiliation> </creator> <creator> <creatorName>Butun, Serkan</creatorName> <givenName>Serkan</givenName> <familyName>Butun</familyName> </creator> <creator> <creatorName>Caban, Piotr</creatorName> <givenName>Piotr</givenName> <familyName>Caban</familyName> </creator> <creator> <creatorName>Strupinski, Wlodek</creatorName> <givenName>Wlodek</givenName> <familyName>Strupinski</familyName> <affiliation>Inst Elect Mat Technol, PL-01919 Warsaw, Poland</affiliation> </creator> <creator> <creatorName>Ozbay, Ekmel</creatorName> <givenName>Ekmel</givenName> <familyName>Ozbay</familyName> </creator> </creators> <titles> <title>Integrated Algan Quadruple-Band Ultraviolet Photodetectors</title> </titles> <publisher>Aperta</publisher> <publicationYear>2012</publicationYear> <dates> <date dateType="Issued">2012-01-01</date> </dates> <resourceType resourceTypeGeneral="Text">Journal article</resourceType> <alternateIdentifiers> <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/87345</alternateIdentifier> </alternateIdentifiers> <relatedIdentifiers> <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1088/0268-1242/27/6/065004</relatedIdentifier> </relatedIdentifiers> <rightsList> <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights> <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights> </rightsList> <descriptions> <description descriptionType="Abstract">Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.</description> </descriptions> </resource>
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