1 Ocak 2012 Dergi makalesi Açık Erişim

Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel

Citation Style Language JSON

{
  "DOI": "10.1088/0268-1242/27/6/065004", 
  "abstract": "Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.", 
  "author": [
    {
      "family": "Gokkavas", 
      "given": " Mutlu"
    }, 
    {
      "family": "Butun", 
      "given": " Serkan"
    }, 
    {
      "family": "Caban", 
      "given": " Piotr"
    }, 
    {
      "family": "Strupinski", 
      "given": " Wlodek"
    }, 
    {
      "family": "Ozbay", 
      "given": " Ekmel"
    }
  ], 
  "container_title": "SEMICONDUCTOR SCIENCE AND TECHNOLOGY", 
  "id": "87345", 
  "issue": "6", 
  "issued": {
    "date-parts": [
      [
        2012, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Integrated AlGaN quadruple-band ultraviolet photodetectors", 
  "type": "article-journal", 
  "volume": "27"
}