Dergi makalesi Açık Erişim

Integrated AlGaN quadruple-band ultraviolet photodetectors

2012    Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel

Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.