1 Ocak 2012 Dergi makalesi Açık Erişim

Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel

Dublin Core

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  <dc:creator>Gokkavas, Mutlu</dc:creator>
  <dc:creator>Butun, Serkan</dc:creator>
  <dc:creator>Caban, Piotr</dc:creator>
  <dc:creator>Strupinski, Wlodek</dc:creator>
  <dc:creator>Ozbay, Ekmel</dc:creator>
  <dc:date>2012-01-01</dc:date>
  <dc:description>Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/87345</dc:identifier>
  <dc:identifier>oai:zenodo.org:87345</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27(6)</dc:source>
  <dc:title>Integrated AlGaN quadruple-band ultraviolet photodetectors</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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