1 Ocak 2012 Dergi makalesi Açık Erişim

Gokkavas, Mutlu; Butun, Serkan; Caban, Piotr; Strupinski, Wlodek; Ozbay, Ekmel

JSON-LD (schema.org)

{
  "@context": "https://schema.org/", 
  "@id": 87345, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Gokkavas, Mutlu"
    }, 
    {
      "@type": "Person", 
      "name": "Butun, Serkan"
    }, 
    {
      "@type": "Person", 
      "name": "Caban, Piotr"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Inst Elect Mat Technol, PL-01919 Warsaw, Poland", 
      "name": "Strupinski, Wlodek"
    }, 
    {
      "@type": "Person", 
      "name": "Ozbay, Ekmel"
    }
  ], 
  "datePublished": "2012-01-01", 
  "description": "Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.", 
  "headline": "Integrated AlGaN quadruple-band ultraviolet photodetectors", 
  "identifier": 87345, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Integrated AlGaN quadruple-band ultraviolet photodetectors", 
  "url": "https://aperta.ulakbim.gov.tr/record/87345"
}