1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

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    <subfield code="a">This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.</subfield>
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