1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

MARC21 XML

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2019-01-01</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="u">Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</subfield>
    <subfield code="a">Ertop, Ozan</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="u">http://www.opendefinition.org/licenses/cc-by</subfield>
    <subfield code="a">Creative Commons Attribution</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="u">Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</subfield>
    <subfield code="a">Donmez, Bahadir</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="u">Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</subfield>
    <subfield code="a">Mutlu, Senol</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:zenodo.org:73805</subfield>
    <subfield code="p">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.81043/aperta.73805</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <controlfield tag="005">20210316040244.0</controlfield>
  <datafield tag="773" ind1=" " ind2=" ">
    <subfield code="i">isVersionOf</subfield>
    <subfield code="a">10.81043/aperta.73804</subfield>
    <subfield code="n">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="2">opendefinition.org</subfield>
    <subfield code="a">cc-by</subfield>
  </datafield>
  <controlfield tag="001">73805</controlfield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="b">conferencepaper</subfield>
    <subfield code="a">publication</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="u">https://aperta.ulakbim.gov.trrecord/73805/files/bib-10cb2c02-c87d-4b7e-96d0-a764f2353dcf.txt</subfield>
    <subfield code="z">md5:26984e5fd448d6a3048ec9796bf72aa6</subfield>
    <subfield code="s">315</subfield>
  </datafield>
  <datafield tag="711" ind1=" " ind2=" ">
    <subfield code="a">2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS &amp; EUROSENSORS XXXIII (TRANSDUCERS &amp; EUROSENSORS XXXIII)</subfield>
  </datafield>
</record>