1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

DataCite XML

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/73805</identifier>
  <creators>
    <creator>
      <creatorName>Ertop, Ozan</creatorName>
      <givenName>Ozan</givenName>
      <familyName>Ertop</familyName>
      <affiliation>Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Donmez, Bahadir</creatorName>
      <givenName>Bahadir</givenName>
      <familyName>Donmez</familyName>
      <affiliation>Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Mutlu, Senol</creatorName>
      <givenName>Senol</givenName>
      <familyName>Mutlu</familyName>
      <affiliation>Bogazici Univ, Dept Elect &amp; Elect Engn, Istanbul, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Improved Gain And Bandwidth Of Water-Gated Field Effect Transistor (Wg-Fet) Circuits Using Solutions With Higher Ion Concentration</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2019</publicationYear>
  <dates>
    <date dateType="Issued">2019-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/73805</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.73804</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.73805</relatedIdentifier>
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  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.</description>
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