1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

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  <dc:creator>Ertop, Ozan</dc:creator>
  <dc:creator>Donmez, Bahadir</dc:creator>
  <dc:creator>Mutlu, Senol</dc:creator>
  <dc:date>2019-01-01</dc:date>
  <dc:description>This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/73805</dc:identifier>
  <dc:identifier>oai:zenodo.org:73805</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:title>IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION</dc:title>
  <dc:type>info:eu-repo/semantics/conferencePaper</dc:type>
  <dc:type>publication-conferencepaper</dc:type>
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