1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

JSON

{
  "conceptdoi": "10.81043/aperta.73804", 
  "conceptrecid": "73804", 
  "created": "2021-03-16T04:02:44.593697+00:00", 
  "doi": "10.81043/aperta.73805", 
  "files": [
    {
      "bucket": "6373b581-46e7-47c7-b733-9f51bffb66a2", 
      "checksum": "md5:26984e5fd448d6a3048ec9796bf72aa6", 
      "key": "bib-10cb2c02-c87d-4b7e-96d0-a764f2353dcf.txt", 
      "links": {
        "self": "https://aperta.ulakbim.gov.tr/api/files/6373b581-46e7-47c7-b733-9f51bffb66a2/bib-10cb2c02-c87d-4b7e-96d0-a764f2353dcf.txt"
      }, 
      "size": 315, 
      "type": "txt"
    }
  ], 
  "id": 73805, 
  "links": {
    "badge": "https://aperta.ulakbim.gov.tr/badge/doi/10.81043/aperta.73805.svg", 
    "bucket": "https://aperta.ulakbim.gov.tr/api/files/6373b581-46e7-47c7-b733-9f51bffb66a2", 
    "conceptbadge": "https://aperta.ulakbim.gov.tr/badge/doi/10.81043/aperta.73804.svg", 
    "conceptdoi": "https://doi.org/10.81043/aperta.73804", 
    "doi": "https://doi.org/10.81043/aperta.73805", 
    "html": "https://aperta.ulakbim.gov.tr/record/73805", 
    "latest": "https://aperta.ulakbim.gov.tr/api/records/73805", 
    "latest_html": "https://aperta.ulakbim.gov.tr/record/73805"
  }, 
  "metadata": {
    "access_right": "open", 
    "access_right_category": "success", 
    "communities": [
      {
        "id": "tubitak-destekli-proje-yayinlari"
      }
    ], 
    "creators": [
      {
        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
        "name": "Ertop, Ozan"
      }, 
      {
        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
        "name": "Donmez, Bahadir"
      }, 
      {
        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
        "name": "Mutlu, Senol"
      }
    ], 
    "description": "This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.", 
    "doi": "10.81043/aperta.73805", 
    "has_grant": false, 
    "license": {
      "id": "cc-by"
    }, 
    "meeting": {
      "title": "2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)"
    }, 
    "publication_date": "2019-01-01", 
    "related_identifiers": [
      {
        "identifier": "10.81043/aperta.73804", 
        "relation": "isVersionOf", 
        "scheme": "doi"
      }
    ], 
    "relations": {
      "version": [
        {
          "count": 1, 
          "index": 0, 
          "is_last": true, 
          "last_child": {
            "pid_type": "recid", 
            "pid_value": "73805"
          }, 
          "parent": {
            "pid_type": "recid", 
            "pid_value": "73804"
          }
        }
      ]
    }, 
    "resource_type": {
      "subtype": "conferencepaper", 
      "title": "Konferans bildirisi", 
      "type": "publication"
    }, 
    "title": "IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION"
  }, 
  "owners": [
    1
  ], 
  "revision": 1, 
  "stats": {
    "downloads": 6.0, 
    "unique_downloads": 5.0, 
    "unique_views": 30.0, 
    "version_downloads": 6.0, 
    "version_unique_downloads": 5.0, 
    "version_unique_views": 30.0, 
    "version_views": 32.0, 
    "version_volume": 1890.0, 
    "views": 32.0, 
    "volume": 1890.0
  }, 
  "updated": "2021-03-16T04:02:44.636003+00:00"
}