1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

Citation Style Language JSON

{
  "URL": "https://aperta.ulakbim.gov.tr/record/73805", 
  "abstract": "This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.", 
  "author": [
    {
      "family": "Ertop", 
      "given": " Ozan"
    }, 
    {
      "family": "Donmez", 
      "given": " Bahadir"
    }, 
    {
      "family": "Mutlu", 
      "given": " Senol"
    }
  ], 
  "id": "73805", 
  "issued": {
    "date-parts": [
      [
        2019, 
        1, 
        1
      ]
    ]
  }, 
  "title": "IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION", 
  "type": "paper-conference"
}