1 Ocak 2019 Konferans bildirisi Açık Erişim

Ertop, Ozan; Donmez, Bahadir; Mutlu, Senol

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{
  "@context": "https://schema.org/", 
  "@id": 73805, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
      "name": "Ertop, Ozan"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
      "name": "Donmez, Bahadir"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, Istanbul, Turkey", 
      "name": "Mutlu, Senol"
    }
  ], 
  "datePublished": "2019-01-01", 
  "description": "This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silicon film and inert gold electrodes. The gain and bandwidth of a common source amplifier built using WG-FET depend mostly on the resistance of solution droplet and electrical double layer (EDL) capacitances. Increasing the molarity from DI-water to 20 mM increases the gain of the common source amplifier at 5 Hz from 1,65 dB to 8,05 dB and the unity-gain frequency from 10 Hz to 1 kHz.", 
  "headline": "IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION", 
  "identifier": 73805, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "IMPROVED GAIN AND BANDWIDTH OF WATER-GATED FIELD EFFECT TRANSISTOR (WG-FET) CIRCUITS USING SOLUTIONS WITH HIGHER ION CONCENTRATION", 
  "url": "https://aperta.ulakbim.gov.tr/record/73805"
}