Dergi makalesi Açık Erişim
Cantas, Ayten; Ozyuzer, Lutfi; Aygun, Gulnur
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Cantas, Ayten</dc:creator> <dc:creator>Ozyuzer, Lutfi</dc:creator> <dc:creator>Aygun, Gulnur</dc:creator> <dc:date>2018-01-01</dc:date> <dc:description>A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.</dc:description> <dc:identifier>https://aperta.ulakbim.gov.trrecord/34899</dc:identifier> <dc:identifier>oai:zenodo.org:34899</dc:identifier> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights> <dc:source>MATERIALS RESEARCH EXPRESS 5(9)</dc:source> <dc:title>Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> <dc:type>publication-article</dc:type> </oai_dc:dc>
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