1 Ocak 2018 Dergi makalesi Açık Erişim

Cantas, Ayten; Ozyuzer, Lutfi; Aygun, Gulnur

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{
  "@context": "https://schema.org/", 
  "@id": 34899, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Cantas, Ayten"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey", 
      "name": "Ozyuzer, Lutfi"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey", 
      "name": "Aygun, Gulnur"
    }
  ], 
  "datePublished": "2018-01-01", 
  "description": "A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.", 
  "headline": "Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure", 
  "identifier": 34899, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure", 
  "url": "https://aperta.ulakbim.gov.tr/record/34899"
}