1 Ocak 2018 Dergi makalesi Açık Erişim

Cantas, Ayten; Ozyuzer, Lutfi; Aygun, Gulnur

DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/34899</identifier>
  <creators>
    <creator>
      <creatorName>Cantas, Ayten</creatorName>
      <givenName>Ayten</givenName>
      <familyName>Cantas</familyName>
    </creator>
    <creator>
      <creatorName>Ozyuzer, Lutfi</creatorName>
      <givenName>Lutfi</givenName>
      <familyName>Ozyuzer</familyName>
      <affiliation>Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Aygun, Gulnur</creatorName>
      <givenName>Gulnur</givenName>
      <familyName>Aygun</familyName>
      <affiliation>Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Comparision Of In Situ Spectroscopic Ellipsometer And Ex Situ X-Ray Photoelectron Spectroscopy Depth Profiling Analysis Of Hfo2/Hf/Si Multilayer Structure</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/34899</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1088/2053-1591/aad856</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.</description>
  </descriptions>
</resource>