1 Ocak 2018 Dergi makalesi Açık Erişim

Cantas, Ayten; Ozyuzer, Lutfi; Aygun, Gulnur

Citation Style Language JSON

{
  "DOI": "10.1088/2053-1591/aad856", 
  "abstract": "A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.", 
  "author": [
    {
      "family": "Cantas", 
      "given": " Ayten"
    }, 
    {
      "family": "Ozyuzer", 
      "given": " Lutfi"
    }, 
    {
      "family": "Aygun", 
      "given": " Gulnur"
    }
  ], 
  "container_title": "MATERIALS RESEARCH EXPRESS", 
  "id": "34899", 
  "issue": "9", 
  "issued": {
    "date-parts": [
      [
        2018, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure", 
  "type": "article-journal", 
  "volume": "5"
}