1 Ocak 2022 Dergi makalesi Açık Erişim

Gursoy, Mehmet; Citak, Emre; Karaman, Mustafa

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    <subfield code="a">Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique</subfield>
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    <subfield code="a">Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 degrees C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 degrees C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I-V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.</subfield>
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    <subfield code="u">Konya Tech Univ, Dept Chem Engn, TR-42030 Konya, Turkey</subfield>
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