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Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique

Gursoy, Mehmet; Citak, Emre; Karaman, Mustafa


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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Gursoy, Mehmet</dc:creator>
  <dc:creator>Citak, Emre</dc:creator>
  <dc:creator>Karaman, Mustafa</dc:creator>
  <dc:date>2022-01-01</dc:date>
  <dc:description>Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 degrees C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 degrees C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I-V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/239280</dc:identifier>
  <dc:identifier>oai:aperta.ulakbim.gov.tr:239280</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>CARBON LETTERS 32(3) 781-787</dc:source>
  <dc:title>Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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