1 Ocak 2022 Dergi makalesi Açık Erişim

Gursoy, Mehmet; Citak, Emre; Karaman, Mustafa

DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/239280</identifier>
  <creators>
    <creator>
      <creatorName>Gursoy, Mehmet</creatorName>
      <givenName>Mehmet</givenName>
      <familyName>Gursoy</familyName>
    </creator>
    <creator>
      <creatorName>Citak, Emre</creatorName>
      <givenName>Emre</givenName>
      <familyName>Citak</familyName>
      <affiliation>Konya Tech Univ, Dept Chem Engn, TR-42030 Konya, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Karaman, Mustafa</creatorName>
      <givenName>Mustafa</givenName>
      <familyName>Karaman</familyName>
    </creator>
  </creators>
  <titles>
    <title>Uniform Deposition Of Large-Area Graphene Films On Copper Using Low-Pressure Chemical Vapor Deposition Technique</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2022</publicationYear>
  <dates>
    <date dateType="Issued">2022-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/239280</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1007/s42823-021-00309-3</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 degrees C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 degrees C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I-V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.</description>
  </descriptions>
</resource>