1 Ocak 2018 Dergi makalesi Açık Erişim

Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Cirpan, Ali; Berber, Savas; Parlak, Elif Alturk

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  <dc:creator>Canimkurbey, Betul</dc:creator>
  <dc:creator>Unay, Hande</dc:creator>
  <dc:creator>Cakirlar, Cigdem</dc:creator>
  <dc:creator>Buyukkose, Serkan</dc:creator>
  <dc:creator>Cirpan, Ali</dc:creator>
  <dc:creator>Berber, Savas</dc:creator>
  <dc:creator>Parlak, Elif Alturk</dc:creator>
  <dc:date>2018-01-01</dc:date>
  <dc:description>The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5: PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5: PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5: PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5: PMMA ratio.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/89769</dc:identifier>
  <dc:identifier>oai:zenodo.org:89769</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF PHYSICS D-APPLIED PHYSICS 51(12)</dc:source>
  <dc:title>Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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