1 Ocak 2018 Dergi makalesi Açık Erişim

Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Cirpan, Ali; Berber, Savas; Parlak, Elif Alturk

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    "creators": [
      {
        "name": "Canimkurbey, Betul"
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      {
        "affiliation": "Middle East Tech Univ, Dept Polymer Sci & Technol, TR-06800 Ankara, Turkey", 
        "name": "Unay, Hande"
      }, 
      {
        "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
        "name": "Cakirlar, Cigdem"
      }, 
      {
        "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
        "name": "Buyukkose, Serkan"
      }, 
      {
        "name": "Cirpan, Ali"
      }, 
      {
        "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
        "name": "Berber, Savas"
      }, 
      {
        "affiliation": "TUBITAK MAM Mat Inst, Photon Technol Lab, TR-41470 Gebze, Kocaeli, Turkey", 
        "name": "Parlak, Elif Alturk"
      }
    ], 
    "description": "The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5: PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5: PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5: PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5: PMMA ratio.", 
    "doi": "10.1088/1361-6463/aaad25", 
    "has_grant": false, 
    "journal": {
      "issue": "12", 
      "title": "JOURNAL OF PHYSICS D-APPLIED PHYSICS", 
      "volume": "51"
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    "license": {
      "id": "cc-by"
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    "publication_date": "2018-01-01", 
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    "resource_type": {
      "subtype": "article", 
      "title": "Dergi makalesi", 
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    "title": "Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET"
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  "revision": 1, 
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