1 Ocak 2018 Dergi makalesi Açık Erişim

Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Cirpan, Ali; Berber, Savas; Parlak, Elif Alturk

Citation Style Language JSON

{
  "DOI": "10.1088/1361-6463/aaad25", 
  "abstract": "The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5: PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5: PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5: PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5: PMMA ratio.", 
  "author": [
    {
      "family": "Canimkurbey", 
      "given": " Betul"
    }, 
    {
      "family": "Unay", 
      "given": " Hande"
    }, 
    {
      "family": "Cakirlar", 
      "given": " Cigdem"
    }, 
    {
      "family": "Buyukkose", 
      "given": " Serkan"
    }, 
    {
      "family": "Cirpan", 
      "given": " Ali"
    }, 
    {
      "family": "Berber", 
      "given": " Savas"
    }, 
    {
      "family": "Parlak", 
      "given": " Elif Alturk"
    }
  ], 
  "container_title": "JOURNAL OF PHYSICS D-APPLIED PHYSICS", 
  "id": "89769", 
  "issue": "12", 
  "issued": {
    "date-parts": [
      [
        2018, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET", 
  "type": "article-journal", 
  "volume": "51"
}