1 Ocak 2018 Dergi makalesi Açık Erişim

Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Cirpan, Ali; Berber, Savas; Parlak, Elif Alturk

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/89769</identifier>
  <creators>
    <creator>
      <creatorName>Canimkurbey, Betul</creatorName>
      <givenName>Betul</givenName>
      <familyName>Canimkurbey</familyName>
    </creator>
    <creator>
      <creatorName>Unay, Hande</creatorName>
      <givenName>Hande</givenName>
      <familyName>Unay</familyName>
      <affiliation>Middle East Tech Univ, Dept Polymer Sci &amp; Technol, TR-06800 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Cakirlar, Cigdem</creatorName>
      <givenName>Cigdem</givenName>
      <familyName>Cakirlar</familyName>
      <affiliation>Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Buyukkose, Serkan</creatorName>
      <givenName>Serkan</givenName>
      <familyName>Buyukkose</familyName>
      <affiliation>Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Cirpan, Ali</creatorName>
      <givenName>Ali</givenName>
      <familyName>Cirpan</familyName>
    </creator>
    <creator>
      <creatorName>Berber, Savas</creatorName>
      <givenName>Savas</givenName>
      <familyName>Berber</familyName>
      <affiliation>Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Parlak, Elif Alturk</creatorName>
      <givenName>Elif Alturk</givenName>
      <familyName>Parlak</familyName>
      <affiliation>TUBITAK MAM Mat Inst, Photon Technol Lab, TR-41470 Gebze, Kocaeli, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Medium Band Gap Polymer Based Solution-Processed High-Kappa Composite Gate Dielectrics For Ambipolar Ofet</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/89769</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1088/1361-6463/aaad25</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5: PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5: PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5: PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5: PMMA ratio.</description>
  </descriptions>
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