1 Ocak 2018 Dergi makalesi Açık Erişim

Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Cirpan, Ali; Berber, Savas; Parlak, Elif Alturk

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{
  "@context": "https://schema.org/", 
  "@id": 89769, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Canimkurbey, Betul"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Polymer Sci & Technol, TR-06800 Ankara, Turkey", 
      "name": "Unay, Hande"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
      "name": "Cakirlar, Cigdem"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
      "name": "Buyukkose, Serkan"
    }, 
    {
      "@type": "Person", 
      "name": "Cirpan, Ali"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Gebze Tech Univ, Dept Phys, TR-41400 Kocaeli, Turkey", 
      "name": "Berber, Savas"
    }, 
    {
      "@type": "Person", 
      "affiliation": "TUBITAK MAM Mat Inst, Photon Technol Lab, TR-41470 Gebze, Kocaeli, Turkey", 
      "name": "Parlak, Elif Alturk"
    }
  ], 
  "datePublished": "2018-01-01", 
  "description": "The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5: PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5: PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5: PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5: PMMA ratio.", 
  "headline": "Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET", 
  "identifier": 89769, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET", 
  "url": "https://aperta.ulakbim.gov.tr/record/89769"
}