1 Ocak 2019 Dergi makalesi Açık Erişim

Yurchenko, Vladimir; Navruz, Tugba; Ciydem, Mehmet; Altintas, Ayhan

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Yurchenko, Vladimir</dc:creator>
  <dc:creator>Navruz, Tugba</dc:creator>
  <dc:creator>Ciydem, Mehmet</dc:creator>
  <dc:creator>Altintas, Ayhan</dc:creator>
  <dc:date>2019-01-01</dc:date>
  <dc:description>We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetimes in high-resistivity semiconductor layers. We applied the method to undoped Si wafers of high resistivity, at 5 and 30 kOhm*cm, and measured conductivity relaxation times of 10 and 14 microseconds, respectively. In the wafers being considered, relaxation times are likely to be defined by the electron-hole diffusion from the bulk to the wafer surface.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/70489</dc:identifier>
  <dc:identifier>oai:zenodo.org:70489</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>ADVANCED ELECTROMAGNETICS 8(2) 101-107</dc:source>
  <dc:title>Microwave Whispering-Gallery-Mode Photoconductivity Measurement of Recombination Lifetime in Silicon</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>