1 Ocak 2018 Konferans bildirisi Açık Erişim

Memioglu, Onur; Karakuzulu, Alper; Gundel, Adnan; Kocer, Fatih; Civi, Ozlem Aydin

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    <subfield code="a">This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 mu m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.</subfield>
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