1 Ocak 2018 Konferans bildirisi Açık Erişim

Memioglu, Onur; Karakuzulu, Alper; Gundel, Adnan; Kocer, Fatih; Civi, Ozlem Aydin

Citation Style Language JSON

{
  "URL": "https://aperta.ulakbim.gov.tr/record/33311", 
  "abstract": "This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 mu m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.", 
  "author": [
    {
      "family": "Memioglu", 
      "given": " Onur"
    }, 
    {
      "family": "Karakuzulu", 
      "given": " Alper"
    }, 
    {
      "family": "Gundel", 
      "given": " Adnan"
    }, 
    {
      "family": "Kocer", 
      "given": " Fatih"
    }, 
    {
      "family": "Civi", 
      "given": " Ozlem Aydin"
    }
  ], 
  "id": "33311", 
  "issued": {
    "date-parts": [
      [
        2018, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Design and Implementation of an Encapsulated GaN X-band Power Amplifier Family", 
  "type": "paper-conference"
}