1 Ocak 2018 Konferans bildirisi Açık Erişim

Memioglu, Onur; Karakuzulu, Alper; Gundel, Adnan; Kocer, Fatih; Civi, Ozlem Aydin

DataCite XML

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/33311</identifier>
  <creators>
    <creator>
      <creatorName>Memioglu, Onur</creatorName>
      <givenName>Onur</givenName>
      <familyName>Memioglu</familyName>
      <affiliation>Middle East Tech Univ, Dept Elect &amp; Elect Engn, Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Karakuzulu, Alper</creatorName>
      <givenName>Alper</givenName>
      <familyName>Karakuzulu</familyName>
      <affiliation>Middle East Tech Univ, Dept Elect &amp; Elect Engn, Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gundel, Adnan</creatorName>
      <givenName>Adnan</givenName>
      <familyName>Gundel</familyName>
      <affiliation>Middle East Tech Univ, Dept Elect &amp; Elect Engn, Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Kocer, Fatih</creatorName>
      <givenName>Fatih</givenName>
      <familyName>Kocer</familyName>
      <affiliation>Analog Devices Inc, Chelmsford, MA USA</affiliation>
    </creator>
    <creator>
      <creatorName>Civi, Ozlem Aydin</creatorName>
      <givenName>Ozlem Aydin</givenName>
      <familyName>Civi</familyName>
      <affiliation>Middle East Tech Univ, Dept Elect &amp; Elect Engn, Ankara, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Design And Implementation Of An Encapsulated Gan X-Band Power Amplifier Family</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/33311</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.33310</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.33311</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 mu m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.</description>
  </descriptions>
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