1 Ocak 2018 Konferans bildirisi Açık Erişim

Memioglu, Onur; Karakuzulu, Alper; Gundel, Adnan; Kocer, Fatih; Civi, Ozlem Aydin

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{
  "@context": "https://schema.org/", 
  "@id": 33311, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey", 
      "name": "Memioglu, Onur"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey", 
      "name": "Karakuzulu, Alper"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey", 
      "name": "Gundel, Adnan"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Analog Devices Inc, Chelmsford, MA USA", 
      "name": "Kocer, Fatih"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey", 
      "name": "Civi, Ozlem Aydin"
    }
  ], 
  "datePublished": "2018-01-01", 
  "description": "This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 mu m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.", 
  "headline": "Design and Implementation of an Encapsulated GaN X-band Power Amplifier Family", 
  "identifier": 33311, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Design and Implementation of an Encapsulated GaN X-band Power Amplifier Family", 
  "url": "https://aperta.ulakbim.gov.tr/record/33311"
}