1 Ocak 2023 Dergi makalesi Açık Erişim

Kalem, Seref; Tekin, Serdar B.; Kaya, Zahit E.; Jalaguier, Eric; Roelofs, Robin; Yildirim, Saffet; Yavuzcetin, Ozgur; Wenger, Christian

Dublin Core

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  <dc:creator>Kalem, Seref</dc:creator>
  <dc:creator>Tekin, Serdar B.</dc:creator>
  <dc:creator>Kaya, Zahit E.</dc:creator>
  <dc:creator>Jalaguier, Eric</dc:creator>
  <dc:creator>Roelofs, Robin</dc:creator>
  <dc:creator>Yildirim, Saffet</dc:creator>
  <dc:creator>Yavuzcetin, Ozgur</dc:creator>
  <dc:creator>Wenger, Christian</dc:creator>
  <dc:date>2023-01-01</dc:date>
  <dc:description>This paper explores the suitability of atomic layer deposited hafnium oxide (HfO2) based resistive oxide mem-ories for their integration into advanced embedded non-volatile memory technology nodes at 28 nm and below. Downscaling trends in advanced CMOS semiconductor technology and novel user needs require high packing density, lower power consumption, faster read-write with enhanced reliability features. Two terminal resistive memory layers, which were produced under optimized atomic layer deposition conditions have been investi-gated in terms of these features in addition of downscaling and cost-effective production. The experimental results are focused on downscaling issue of HfO2 based oxide RAMs with an emphasis on structure and electrode metallization dependent resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics. The role of the metallization, microstructure and dielectric properties were determined to have better insight into the switching performance. Finally, a memory cell array test platform was set up using a 4k 1T1R cell array architecture and its suitability was demonstrated for testing the performance of resistive memory cells for advanced technology nodes.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/265424</dc:identifier>
  <dc:identifier>oai:aperta.ulakbim.gov.tr:265424</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 158 13</dc:source>
  <dc:title>Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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