1 Ocak 2023 Dergi makalesi Açık Erişim

Kalem, Seref; Tekin, Serdar B.; Kaya, Zahit E.; Jalaguier, Eric; Roelofs, Robin; Yildirim, Saffet; Yavuzcetin, Ozgur; Wenger, Christian

DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/265424</identifier>
  <creators>
    <creator>
      <creatorName>Kalem, Seref</creatorName>
      <givenName>Seref</givenName>
      <familyName>Kalem</familyName>
      <affiliation>Bahcesehir Univ, Dept Elect &amp; Elect Engn, Ciragan Caddesi, TR-34353 Istanbul, Turkiye</affiliation>
    </creator>
    <creator>
      <creatorName>Tekin, Serdar B.</creatorName>
      <givenName>Serdar B.</givenName>
      <familyName>Tekin</familyName>
      <affiliation>Univ Liverpool, Dept Elect Engn &amp; Elect, Liverpool, England</affiliation>
    </creator>
    <creator>
      <creatorName>Kaya, Zahit E.</creatorName>
      <givenName>Zahit E.</givenName>
      <familyName>Kaya</familyName>
      <affiliation>TUBITAK BILGEM, Informat &amp; Informat Secur Res Ctr, Gebze, Turkiye</affiliation>
    </creator>
    <creator>
      <creatorName>Jalaguier, Eric</creatorName>
      <givenName>Eric</givenName>
      <familyName>Jalaguier</familyName>
      <affiliation>CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France</affiliation>
    </creator>
    <creator>
      <creatorName>Roelofs, Robin</creatorName>
      <givenName>Robin</givenName>
      <familyName>Roelofs</familyName>
      <affiliation>ASM Kapeldreef 75, B-3001 Leuven, Belgium</affiliation>
    </creator>
    <creator>
      <creatorName>Yildirim, Saffet</creatorName>
      <givenName>Saffet</givenName>
      <familyName>Yildirim</familyName>
      <affiliation>Istanbul Univ, Dept Phys, Istanbul, Turkiye</affiliation>
    </creator>
    <creator>
      <creatorName>Yavuzcetin, Ozgur</creatorName>
      <givenName>Ozgur</givenName>
      <familyName>Yavuzcetin</familyName>
      <affiliation>Univ Wisconsin, Dept Phys, Whitewater, WI USA</affiliation>
    </creator>
    <creator>
      <creatorName>Wenger, Christian</creatorName>
      <givenName>Christian</givenName>
      <familyName>Wenger</familyName>
      <affiliation>Leibniz Inst Innovat Mikroelekt, IHP, Frankfurt, Germany</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Effect Of Downsizing And Metallization On Switching Performance Of Ultrathin Hafnium Oxide Memory Cells</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2023</publicationYear>
  <dates>
    <date dateType="Issued">2023-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/265424</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.mssp.2023.107346</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;This paper explores the suitability of atomic layer deposited hafnium oxide (HfO2) based resistive oxide mem-ories for their integration into advanced embedded non-volatile memory technology nodes at 28 nm and below. Downscaling trends in advanced CMOS semiconductor technology and novel user needs require high packing density, lower power consumption, faster read-write with enhanced reliability features. Two terminal resistive memory layers, which were produced under optimized atomic layer deposition conditions have been investi-gated in terms of these features in addition of downscaling and cost-effective production. The experimental results are focused on downscaling issue of HfO2 based oxide RAMs with an emphasis on structure and electrode metallization dependent resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics. The role of the metallization, microstructure and dielectric properties were determined to have better insight into the switching performance. Finally, a memory cell array test platform was set up using a 4k 1T1R cell array architecture and its suitability was demonstrated for testing the performance of resistive memory cells for advanced technology nodes.&lt;/p&gt;</description>
  </descriptions>
</resource>