1 Ocak 2023 Dergi makalesi Açık Erişim

Kalem, Seref; Tekin, Serdar B.; Kaya, Zahit E.; Jalaguier, Eric; Roelofs, Robin; Yildirim, Saffet; Yavuzcetin, Ozgur; Wenger, Christian

Citation Style Language JSON

{
  "DOI": "10.1016/j.mssp.2023.107346", 
  "abstract": "<p>This paper explores the suitability of atomic layer deposited hafnium oxide (HfO2) based resistive oxide mem-ories for their integration into advanced embedded non-volatile memory technology nodes at 28 nm and below. Downscaling trends in advanced CMOS semiconductor technology and novel user needs require high packing density, lower power consumption, faster read-write with enhanced reliability features. Two terminal resistive memory layers, which were produced under optimized atomic layer deposition conditions have been investi-gated in terms of these features in addition of downscaling and cost-effective production. The experimental results are focused on downscaling issue of HfO2 based oxide RAMs with an emphasis on structure and electrode metallization dependent resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics. The role of the metallization, microstructure and dielectric properties were determined to have better insight into the switching performance. Finally, a memory cell array test platform was set up using a 4k 1T1R cell array architecture and its suitability was demonstrated for testing the performance of resistive memory cells for advanced technology nodes.</p>", 
  "author": [
    {
      "family": "Kalem", 
      "given": " Seref"
    }, 
    {
      "family": "Tekin", 
      "given": " Serdar B."
    }, 
    {
      "family": "Kaya", 
      "given": " Zahit E."
    }, 
    {
      "family": "Jalaguier", 
      "given": " Eric"
    }, 
    {
      "family": "Roelofs", 
      "given": " Robin"
    }, 
    {
      "family": "Yildirim", 
      "given": " Saffet"
    }, 
    {
      "family": "Yavuzcetin", 
      "given": " Ozgur"
    }, 
    {
      "family": "Wenger", 
      "given": " Christian"
    }
  ], 
  "container_title": "MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING", 
  "id": "265424", 
  "issued": {
    "date-parts": [
      [
        2023, 
        1, 
        1
      ]
    ]
  }, 
  "page": "13", 
  "title": "Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells", 
  "type": "article-journal", 
  "volume": "158"
}