1 Ocak 2023 Dergi makalesi Açık Erişim

Kalem, Seref; Tekin, Serdar B.; Kaya, Zahit E.; Jalaguier, Eric; Roelofs, Robin; Yildirim, Saffet; Yavuzcetin, Ozgur; Wenger, Christian

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{
  "@context": "https://schema.org/", 
  "@id": 265424, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Bahcesehir Univ, Dept Elect & Elect Engn, Ciragan Caddesi, TR-34353 Istanbul, Turkiye", 
      "name": "Kalem, Seref"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Liverpool, Dept Elect Engn & Elect, Liverpool, England", 
      "name": "Tekin, Serdar B."
    }, 
    {
      "@type": "Person", 
      "affiliation": "TUBITAK BILGEM, Informat & Informat Secur Res Ctr, Gebze, Turkiye", 
      "name": "Kaya, Zahit E."
    }, 
    {
      "@type": "Person", 
      "affiliation": "CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France", 
      "name": "Jalaguier, Eric"
    }, 
    {
      "@type": "Person", 
      "affiliation": "ASM Kapeldreef 75, B-3001 Leuven, Belgium", 
      "name": "Roelofs, Robin"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Univ, Dept Phys, Istanbul, Turkiye", 
      "name": "Yildirim, Saffet"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Wisconsin, Dept Phys, Whitewater, WI USA", 
      "name": "Yavuzcetin, Ozgur"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Leibniz Inst Innovat Mikroelekt, IHP, Frankfurt, Germany", 
      "name": "Wenger, Christian"
    }
  ], 
  "datePublished": "2023-01-01", 
  "description": "<p>This paper explores the suitability of atomic layer deposited hafnium oxide (HfO2) based resistive oxide mem-ories for their integration into advanced embedded non-volatile memory technology nodes at 28 nm and below. Downscaling trends in advanced CMOS semiconductor technology and novel user needs require high packing density, lower power consumption, faster read-write with enhanced reliability features. Two terminal resistive memory layers, which were produced under optimized atomic layer deposition conditions have been investi-gated in terms of these features in addition of downscaling and cost-effective production. The experimental results are focused on downscaling issue of HfO2 based oxide RAMs with an emphasis on structure and electrode metallization dependent resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics. The role of the metallization, microstructure and dielectric properties were determined to have better insight into the switching performance. Finally, a memory cell array test platform was set up using a 4k 1T1R cell array architecture and its suitability was demonstrated for testing the performance of resistive memory cells for advanced technology nodes.</p>", 
  "headline": "Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells", 
  "identifier": 265424, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells", 
  "url": "https://aperta.ulakbim.gov.tr/record/265424"
}