1 Ocak 2023 Dergi makalesi Açık Erişim

Kalem, Seref; Tekin, Serdar B.; Kaya, Zahit E.; Jalaguier, Eric; Roelofs, Robin; Yildirim, Saffet; Yavuzcetin, Ozgur; Wenger, Christian

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{
  "conceptrecid": "265423", 
  "created": "2024-06-07T11:33:48.127655+00:00", 
  "doi": "10.1016/j.mssp.2023.107346", 
  "files": [
    {
      "bucket": "5381390c-9b2b-4794-901a-887e242a8b19", 
      "checksum": "md5:0682293b69eacfa56dcd80766300191f", 
      "key": "bib-3ec66c39-87e2-4b2a-bd23-e828cb64c48c.txt", 
      "links": {
        "self": "https://aperta.ulakbim.gov.tr/api/files/5381390c-9b2b-4794-901a-887e242a8b19/bib-3ec66c39-87e2-4b2a-bd23-e828cb64c48c.txt"
      }, 
      "size": 282, 
      "type": "txt"
    }
  ], 
  "id": 265424, 
  "links": {
    "badge": "https://aperta.ulakbim.gov.tr/badge/doi/10.1016/j.mssp.2023.107346.svg", 
    "bucket": "https://aperta.ulakbim.gov.tr/api/files/5381390c-9b2b-4794-901a-887e242a8b19", 
    "doi": "https://doi.org/10.1016/j.mssp.2023.107346", 
    "html": "https://aperta.ulakbim.gov.tr/record/265424", 
    "latest": "https://aperta.ulakbim.gov.tr/api/records/265424", 
    "latest_html": "https://aperta.ulakbim.gov.tr/record/265424"
  }, 
  "metadata": {
    "access_right": "open", 
    "access_right_category": "success", 
    "communities": [
      {
        "id": "tubitak-adresli-yayinlar"
      }
    ], 
    "creators": [
      {
        "affiliation": "Bahcesehir Univ, Dept Elect & Elect Engn, Ciragan Caddesi, TR-34353 Istanbul, Turkiye", 
        "name": "Kalem, Seref"
      }, 
      {
        "affiliation": "Univ Liverpool, Dept Elect Engn & Elect, Liverpool, England", 
        "name": "Tekin, Serdar B."
      }, 
      {
        "affiliation": "TUBITAK BILGEM, Informat & Informat Secur Res Ctr, Gebze, Turkiye", 
        "name": "Kaya, Zahit E."
      }, 
      {
        "affiliation": "CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France", 
        "name": "Jalaguier, Eric"
      }, 
      {
        "affiliation": "ASM Kapeldreef 75, B-3001 Leuven, Belgium", 
        "name": "Roelofs, Robin"
      }, 
      {
        "affiliation": "Istanbul Univ, Dept Phys, Istanbul, Turkiye", 
        "name": "Yildirim, Saffet"
      }, 
      {
        "affiliation": "Univ Wisconsin, Dept Phys, Whitewater, WI USA", 
        "name": "Yavuzcetin, Ozgur"
      }, 
      {
        "affiliation": "Leibniz Inst Innovat Mikroelekt, IHP, Frankfurt, Germany", 
        "name": "Wenger, Christian"
      }
    ], 
    "description": "<p>This paper explores the suitability of atomic layer deposited hafnium oxide (HfO2) based resistive oxide mem-ories for their integration into advanced embedded non-volatile memory technology nodes at 28 nm and below. Downscaling trends in advanced CMOS semiconductor technology and novel user needs require high packing density, lower power consumption, faster read-write with enhanced reliability features. Two terminal resistive memory layers, which were produced under optimized atomic layer deposition conditions have been investi-gated in terms of these features in addition of downscaling and cost-effective production. The experimental results are focused on downscaling issue of HfO2 based oxide RAMs with an emphasis on structure and electrode metallization dependent resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics. The role of the metallization, microstructure and dielectric properties were determined to have better insight into the switching performance. Finally, a memory cell array test platform was set up using a 4k 1T1R cell array architecture and its suitability was demonstrated for testing the performance of resistive memory cells for advanced technology nodes.</p>", 
    "doi": "10.1016/j.mssp.2023.107346", 
    "has_grant": false, 
    "journal": {
      "pages": "13", 
      "title": "MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING", 
      "volume": "158"
    }, 
    "license": {
      "id": "cc-by"
    }, 
    "publication_date": "2023-01-01", 
    "relations": {
      "version": [
        {
          "count": 1, 
          "index": 0, 
          "is_last": true, 
          "last_child": {
            "pid_type": "recid", 
            "pid_value": "265424"
          }, 
          "parent": {
            "pid_type": "recid", 
            "pid_value": "265423"
          }
        }
      ]
    }, 
    "resource_type": {
      "subtype": "article", 
      "title": "Dergi makalesi", 
      "type": "publication"
    }, 
    "science_branches": [
      "Di\u011fer"
    ], 
    "title": "Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells"
  }, 
  "owners": [
    1
  ], 
  "revision": 1, 
  "stats": {
    "downloads": 2.0, 
    "unique_downloads": 2.0, 
    "unique_views": 6.0, 
    "version_downloads": 2.0, 
    "version_unique_downloads": 2.0, 
    "version_unique_views": 6.0, 
    "version_views": 7.0, 
    "version_volume": 564.0, 
    "views": 7.0, 
    "volume": 564.0
  }, 
  "updated": "2024-06-07T11:33:48.176840+00:00"
}