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Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition

Alevli, Mustafa; Gungor, Nese


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<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Alevli, Mustafa</dc:creator>
  <dc:creator>Gungor, Nese</dc:creator>
  <dc:date>2020-01-01</dc:date>
  <dc:description>In this work, we have studied the influence of N-2/H-2 plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N-2/H-2 plasma gas flow rates on crystallinity, lattice distortion, phonon properties, and bandgap was analyzed. We found that the strain can be relieved fully or partially through the incorporation of H-2 in plasma. We present Raman scattering measurements on HCPA-ALD grown InN films. We found that the E-2-high phonon relaxation time increases with decreasing H-2 plasma flow. Atomic force microscopy (AFM) topography measurements revealed high surface roughness for InN films deposited with N-2/H-2. The spectroscopic ellipsometry analysis revealed that InN surface layers are thick and contain large void structures with the incorporation of H-2 in N-2 plasma. Combining the AFM surface morphology analysis with spectroscopic ellipsometry analysis, we propose a possible surface reaction mechanism for hydrogen incorporation on an InN surface. A clear shift of the absorption edge and a decrease in the absorption coefficient were observed when H-2 was introduced into N-2 flow. These results may provide a useful guide for understanding the HCPA-ALD growth mechanism of InN and In-rich nitrides.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/11019</dc:identifier>
  <dc:identifier>oai:zenodo.org:11019</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF VACUUM SCIENCE &amp; TECHNOLOGY A 38(6)</dc:source>
  <dc:title>Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>
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