1 Ocak 2020 Dergi makalesi Açık Erişim

Alevli, Mustafa; Gungor, Nese

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        "affiliation": "Marmara Univ, Fac Arts & Sci, Dept Phys, TR-34722 Istanbul, Turkey", 
        "name": "Alevli, Mustafa"
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      {
        "affiliation": "Marmara Univ, Fac Arts & Sci, Dept Phys, TR-34722 Istanbul, Turkey", 
        "name": "Gungor, Nese"
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    "description": "In this work, we have studied the influence of N-2/H-2 plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N-2/H-2 plasma gas flow rates on crystallinity, lattice distortion, phonon properties, and bandgap was analyzed. We found that the strain can be relieved fully or partially through the incorporation of H-2 in plasma. We present Raman scattering measurements on HCPA-ALD grown InN films. We found that the E-2-high phonon relaxation time increases with decreasing H-2 plasma flow. Atomic force microscopy (AFM) topography measurements revealed high surface roughness for InN films deposited with N-2/H-2. The spectroscopic ellipsometry analysis revealed that InN surface layers are thick and contain large void structures with the incorporation of H-2 in N-2 plasma. Combining the AFM surface morphology analysis with spectroscopic ellipsometry analysis, we propose a possible surface reaction mechanism for hydrogen incorporation on an InN surface. A clear shift of the absorption edge and a decrease in the absorption coefficient were observed when H-2 was introduced into N-2 flow. These results may provide a useful guide for understanding the HCPA-ALD growth mechanism of InN and In-rich nitrides.", 
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    "journal": {
      "issue": "6", 
      "title": "JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A", 
      "volume": "38"
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    "publication_date": "2020-01-01", 
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    "title": "Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition"
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