1 Ocak 2020 Dergi makalesi Açık Erişim

Alevli, Mustafa; Gungor, Nese

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{
  "@context": "https://schema.org/", 
  "@id": 11019, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Marmara Univ, Fac Arts & Sci, Dept Phys, TR-34722 Istanbul, Turkey", 
      "name": "Alevli, Mustafa"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Marmara Univ, Fac Arts & Sci, Dept Phys, TR-34722 Istanbul, Turkey", 
      "name": "Gungor, Nese"
    }
  ], 
  "datePublished": "2020-01-01", 
  "description": "In this work, we have studied the influence of N-2/H-2 plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N-2/H-2 plasma gas flow rates on crystallinity, lattice distortion, phonon properties, and bandgap was analyzed. We found that the strain can be relieved fully or partially through the incorporation of H-2 in plasma. We present Raman scattering measurements on HCPA-ALD grown InN films. We found that the E-2-high phonon relaxation time increases with decreasing H-2 plasma flow. Atomic force microscopy (AFM) topography measurements revealed high surface roughness for InN films deposited with N-2/H-2. The spectroscopic ellipsometry analysis revealed that InN surface layers are thick and contain large void structures with the incorporation of H-2 in N-2 plasma. Combining the AFM surface morphology analysis with spectroscopic ellipsometry analysis, we propose a possible surface reaction mechanism for hydrogen incorporation on an InN surface. A clear shift of the absorption edge and a decrease in the absorption coefficient were observed when H-2 was introduced into N-2 flow. These results may provide a useful guide for understanding the HCPA-ALD growth mechanism of InN and In-rich nitrides.", 
  "headline": "Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition", 
  "identifier": 11019, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition", 
  "url": "https://aperta.ulakbim.gov.tr/record/11019"
}