1 Ocak 2020 Dergi makalesi Açık Erişim

Alevli, Mustafa; Gungor, Nese

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/11019</identifier>
  <creators>
    <creator>
      <creatorName>Alevli, Mustafa</creatorName>
      <givenName>Mustafa</givenName>
      <familyName>Alevli</familyName>
      <affiliation>Marmara Univ, Fac Arts &amp; Sci, Dept Phys, TR-34722 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gungor, Nese</creatorName>
      <givenName>Nese</givenName>
      <familyName>Gungor</familyName>
      <affiliation>Marmara Univ, Fac Arts &amp; Sci, Dept Phys, TR-34722 Istanbul, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Effect Of N-2/H-2 Plasma On The Growth Of Inn Thin Films On Sapphire By Hollow-Cathode Plasma-Assisted Atomic Layer Deposition</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2020</publicationYear>
  <dates>
    <date dateType="Issued">2020-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/11019</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1116/6.0000494</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
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  <descriptions>
    <description descriptionType="Abstract">In this work, we have studied the influence of N-2/H-2 plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N-2/H-2 plasma gas flow rates on crystallinity, lattice distortion, phonon properties, and bandgap was analyzed. We found that the strain can be relieved fully or partially through the incorporation of H-2 in plasma. We present Raman scattering measurements on HCPA-ALD grown InN films. We found that the E-2-high phonon relaxation time increases with decreasing H-2 plasma flow. Atomic force microscopy (AFM) topography measurements revealed high surface roughness for InN films deposited with N-2/H-2. The spectroscopic ellipsometry analysis revealed that InN surface layers are thick and contain large void structures with the incorporation of H-2 in N-2 plasma. Combining the AFM surface morphology analysis with spectroscopic ellipsometry analysis, we propose a possible surface reaction mechanism for hydrogen incorporation on an InN surface. A clear shift of the absorption edge and a decrease in the absorption coefficient were observed when H-2 was introduced into N-2 flow. These results may provide a useful guide for understanding the HCPA-ALD growth mechanism of InN and In-rich nitrides.</description>
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