1 Ocak 2017 Konferans bildirisi Açık Erişim

Ashkhasi, Afsoun; Gurbulak, Bekir; Sata, Mehmet; Turgut, Gaven; Duman, Songul

Dublin Core

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  <dc:creator>Ashkhasi, Afsoun</dc:creator>
  <dc:creator>Gurbulak, Bekir</dc:creator>
  <dc:creator>Sata, Mehmet</dc:creator>
  <dc:creator>Turgut, Gaven</dc:creator>
  <dc:creator>Duman, Songul</dc:creator>
  <dc:date>2017-01-01</dc:date>
  <dc:description>GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometcr (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 20 peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500 degrees C). Cd doping causes a significant decrease in the XRD peak intensity.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/48027</dc:identifier>
  <dc:identifier>oai:zenodo.org:48027</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:title>Growth and Structural Characterizations of GaSe and GaSe:Cd Single Crystals</dc:title>
  <dc:type>info:eu-repo/semantics/conferencePaper</dc:type>
  <dc:type>publication-conferencepaper</dc:type>
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