1 Ocak 2017 Konferans bildirisi Açık Erişim

Ashkhasi, Afsoun; Gurbulak, Bekir; Sata, Mehmet; Turgut, Gaven; Duman, Songul

DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/48027</identifier>
  <creators>
    <creator>
      <creatorName>Ashkhasi, Afsoun</creatorName>
      <givenName>Afsoun</givenName>
      <familyName>Ashkhasi</familyName>
      <affiliation>Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gurbulak, Bekir</creatorName>
      <givenName>Bekir</givenName>
      <familyName>Gurbulak</familyName>
      <affiliation>Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Sata, Mehmet</creatorName>
      <givenName>Mehmet</givenName>
      <familyName>Sata</familyName>
      <affiliation>Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Turgut, Gaven</creatorName>
      <givenName>Gaven</givenName>
      <familyName>Turgut</familyName>
      <affiliation>Erzurum Tech Univ, Fac Sci, Dept Basic Sci, TR-25242 Erzurum, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Duman, Songul</creatorName>
      <givenName>Songul</givenName>
      <familyName>Duman</familyName>
      <affiliation>Erzurum Tech Univ, Fac Sci, Dept Basic Sci, TR-25242 Erzurum, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Growth And Structural Characterizations Of Gase And Gase:Cd Single Crystals</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2017</publicationYear>
  <dates>
    <date dateType="Issued">2017-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/48027</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1063/1.4976474</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometcr (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 20 peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500 degrees C). Cd doping causes a significant decrease in the XRD peak intensity.</description>
  </descriptions>
</resource>