1 Ocak 2017 Konferans bildirisi Açık Erişim

Ashkhasi, Afsoun; Gurbulak, Bekir; Sata, Mehmet; Turgut, Gaven; Duman, Songul

Citation Style Language JSON

{
  "DOI": "10.1063/1.4976474", 
  "abstract": "GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometcr (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 20 peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500 degrees C). Cd doping causes a significant decrease in the XRD peak intensity.", 
  "author": [
    {
      "family": "Ashkhasi", 
      "given": " Afsoun"
    }, 
    {
      "family": "Gurbulak", 
      "given": " Bekir"
    }, 
    {
      "family": "Sata", 
      "given": " Mehmet"
    }, 
    {
      "family": "Turgut", 
      "given": " Gaven"
    }, 
    {
      "family": "Duman", 
      "given": " Songul"
    }
  ], 
  "id": "48027", 
  "issued": {
    "date-parts": [
      [
        2017, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Growth and Structural Characterizations of GaSe and GaSe:Cd Single Crystals", 
  "type": "paper-conference"
}