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Growth and Structural Characterizations of GaSe and GaSe:Cd Single Crystals

2017    Ashkhasi, Afsoun; Gurbulak, Bekir; Sata, Mehmet; Turgut, Gaven; Duman, Songul

GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometcr (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 20 peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500 degrees C). Cd doping causes a significant decrease in the XRD peak intensity.