1 Ocak 2017 Konferans bildirisi Açık Erişim

Karaagac, Hakan; Peksu, Elif; Behzad, Hamed; Akgoz, Sare; Parlak, Mehmet

Dublin Core

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  <dc:creator>Karaagac, Hakan</dc:creator>
  <dc:creator>Peksu, Elif</dc:creator>
  <dc:creator>Behzad, Hamed</dc:creator>
  <dc:creator>Akgoz, Sare</dc:creator>
  <dc:creator>Parlak, Mehmet</dc:creator>
  <dc:date>2017-01-01</dc:date>
  <dc:description>Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on glass substrates via a single stage thermal evaporation from a stoichiometric powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The post-growth annealing process lead to migration of the metallic atoms from the surface region into the bulk during the crystallization process, which subsequently causes a significant reduction in the reflection and a change in the mechanism of conduction. From the photoconductivity measurements it was deduced that the deposited CIGS films demonstrated a drastic decrease in resistivity under different illumination intensities. The post-growth annealing effect on the morphology and structure of CIGS thin films is investigated by means of the atomic force microscopy and X-ray diffraction measurements, respectively. Results show that there is a significant change in surface roughness as well as in degree of crystallinity of the films following the annealing process at different temperatures.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/47949</dc:identifier>
  <dc:identifier>oai:zenodo.org:47949</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:title>Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process</dc:title>
  <dc:type>info:eu-repo/semantics/conferencePaper</dc:type>
  <dc:type>publication-conferencepaper</dc:type>
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