1 Ocak 2017 Konferans bildirisi Açık Erişim

Karaagac, Hakan; Peksu, Elif; Behzad, Hamed; Akgoz, Sare; Parlak, Mehmet

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/47949</identifier>
  <creators>
    <creator>
      <creatorName>Karaagac, Hakan</creatorName>
      <givenName>Hakan</givenName>
      <familyName>Karaagac</familyName>
      <affiliation>Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Peksu, Elif</creatorName>
      <givenName>Elif</givenName>
      <familyName>Peksu</familyName>
      <affiliation>Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Behzad, Hamed</creatorName>
      <givenName>Hamed</givenName>
      <familyName>Behzad</familyName>
      <affiliation>Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Akgoz, Sare</creatorName>
      <givenName>Sare</givenName>
      <familyName>Akgoz</familyName>
      <affiliation>Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Parlak, Mehmet</creatorName>
      <givenName>Mehmet</givenName>
      <familyName>Parlak</familyName>
      <affiliation>Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Characterization Of Cuin0.7Ga0.3Se2 Thin Films Deposited By Single Stage Thermal Evaporation Process</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2017</publicationYear>
  <dates>
    <date dateType="Issued">2017-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/47949</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1002/pssc.201700145</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on glass substrates via a single stage thermal evaporation from a stoichiometric powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The post-growth annealing process lead to migration of the metallic atoms from the surface region into the bulk during the crystallization process, which subsequently causes a significant reduction in the reflection and a change in the mechanism of conduction. From the photoconductivity measurements it was deduced that the deposited CIGS films demonstrated a drastic decrease in resistivity under different illumination intensities. The post-growth annealing effect on the morphology and structure of CIGS thin films is investigated by means of the atomic force microscopy and X-ray diffraction measurements, respectively. Results show that there is a significant change in surface roughness as well as in degree of crystallinity of the films following the annealing process at different temperatures.</description>
  </descriptions>
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