1 Ocak 2017 Konferans bildirisi Açık Erişim

Karaagac, Hakan; Peksu, Elif; Behzad, Hamed; Akgoz, Sare; Parlak, Mehmet

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  "@context": "https://schema.org/", 
  "@id": 47949, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey", 
      "name": "Karaagac, Hakan"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey", 
      "name": "Peksu, Elif"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey", 
      "name": "Behzad, Hamed"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey", 
      "name": "Akgoz, Sare"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey", 
      "name": "Parlak, Mehmet"
    }
  ], 
  "datePublished": "2017-01-01", 
  "description": "Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on glass substrates via a single stage thermal evaporation from a stoichiometric powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The post-growth annealing process lead to migration of the metallic atoms from the surface region into the bulk during the crystallization process, which subsequently causes a significant reduction in the reflection and a change in the mechanism of conduction. From the photoconductivity measurements it was deduced that the deposited CIGS films demonstrated a drastic decrease in resistivity under different illumination intensities. The post-growth annealing effect on the morphology and structure of CIGS thin films is investigated by means of the atomic force microscopy and X-ray diffraction measurements, respectively. Results show that there is a significant change in surface roughness as well as in degree of crystallinity of the films following the annealing process at different temperatures.", 
  "headline": "Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process", 
  "identifier": 47949, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process", 
  "url": "https://aperta.ulakbim.gov.tr/record/47949"
}