1 Ocak 2018 Dergi makalesi Açık Erişim

Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.

Dublin Core

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  <dc:creator>Sheremet, V.</dc:creator>
  <dc:creator>Gheshlaghi, N.</dc:creator>
  <dc:creator>Sozen, M.</dc:creator>
  <dc:creator>Elci, M.</dc:creator>
  <dc:creator>Sheremet, N.</dc:creator>
  <dc:creator>Aydinli, A.</dc:creator>
  <dc:creator>Altuntas, I.</dc:creator>
  <dc:creator>Ding, K.</dc:creator>
  <dc:creator>Avrutin, V.</dc:creator>
  <dc:creator>Ozgur, U.</dc:creator>
  <dc:creator>Morkoc, H.</dc:creator>
  <dc:date>2018-01-01</dc:date>
  <dc:description>We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/30327</dc:identifier>
  <dc:identifier>oai:zenodo.org:30327</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>SUPERLATTICES AND MICROSTRUCTURES 116 253-261</dc:source>
  <dc:title>InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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