1 Ocak 2018 Dergi makalesi Açık Erişim

Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/30327</identifier>
  <creators>
    <creator>
      <creatorName>Sheremet, V.</creatorName>
      <givenName>V.</givenName>
      <familyName>Sheremet</familyName>
      <affiliation>Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gheshlaghi, N.</creatorName>
      <givenName>N.</givenName>
      <familyName>Gheshlaghi</familyName>
      <affiliation>Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Sozen, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Sozen</familyName>
      <affiliation>Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Elci, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Elci</familyName>
    </creator>
    <creator>
      <creatorName>Sheremet, N.</creatorName>
      <givenName>N.</givenName>
      <familyName>Sheremet</familyName>
    </creator>
    <creator>
      <creatorName>Aydinli, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Aydinli</familyName>
    </creator>
    <creator>
      <creatorName>Altuntas, I.</creatorName>
      <givenName>I.</givenName>
      <familyName>Altuntas</familyName>
      <affiliation>Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Ding, K.</creatorName>
      <givenName>K.</givenName>
      <familyName>Ding</familyName>
      <affiliation>Virginia Commonwealth Univ, Sch Engn, Dept Elect &amp; Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA</affiliation>
    </creator>
    <creator>
      <creatorName>Avrutin, V.</creatorName>
      <givenName>V.</givenName>
      <familyName>Avrutin</familyName>
      <affiliation>Virginia Commonwealth Univ, Sch Engn, Dept Elect &amp; Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA</affiliation>
    </creator>
    <creator>
      <creatorName>Ozgur, U.</creatorName>
      <givenName>U.</givenName>
      <familyName>Ozgur</familyName>
      <affiliation>Virginia Commonwealth Univ, Sch Engn, Dept Elect &amp; Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA</affiliation>
    </creator>
    <creator>
      <creatorName>Morkoc, H.</creatorName>
      <givenName>H.</givenName>
      <familyName>Morkoc</familyName>
      <affiliation>Virginia Commonwealth Univ, Sch Engn, Dept Elect &amp; Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Ingan Stress Compensation Layers In Ingan/Gan Blue Leds With Step Graded Electron Injectors</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/30327</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.spmi.2018.02.002</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.</description>
  </descriptions>
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