1 Ocak 2018 Dergi makalesi Açık Erişim

Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.

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        "affiliation": "Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey", 
        "name": "Sheremet, V."
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        "affiliation": "Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey", 
        "name": "Gheshlaghi, N."
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        "affiliation": "Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey", 
        "name": "Sozen, M."
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      {
        "name": "Elci, M."
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      {
        "name": "Sheremet, N."
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      {
        "name": "Aydinli, A."
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      {
        "affiliation": "Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey", 
        "name": "Altuntas, I."
      }, 
      {
        "affiliation": "Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA", 
        "name": "Ding, K."
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      {
        "affiliation": "Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA", 
        "name": "Avrutin, V."
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        "affiliation": "Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA", 
        "name": "Ozgur, U."
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        "affiliation": "Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA", 
        "name": "Morkoc, H."
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    "description": "We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.", 
    "doi": "10.1016/j.spmi.2018.02.002", 
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      "pages": "253-261", 
      "title": "SUPERLATTICES AND MICROSTRUCTURES", 
      "volume": "116"
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    "title": "InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors"
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