Dergi makalesi Açık Erişim
Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.
{
"DOI": "10.1016/j.spmi.2018.02.002",
"abstract": "We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.",
"author": [
{
"family": "Sheremet",
"given": " V."
},
{
"family": "Gheshlaghi",
"given": " N."
},
{
"family": "Sozen",
"given": " M."
},
{
"family": "Elci",
"given": " M."
},
{
"family": "Sheremet",
"given": " N."
},
{
"family": "Aydinli",
"given": " A."
},
{
"family": "Altuntas",
"given": " I."
},
{
"family": "Ding",
"given": " K."
},
{
"family": "Avrutin",
"given": " V."
},
{
"family": "Ozgur",
"given": " U."
},
{
"family": "Morkoc",
"given": " H."
}
],
"container_title": "SUPERLATTICES AND MICROSTRUCTURES",
"id": "30327",
"issued": {
"date-parts": [
[
2018,
1,
1
]
]
},
"page": "253-261",
"title": "InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors",
"type": "article-journal",
"volume": "116"
}
| Görüntülenme | 53 |
| İndirme | 15 |
| Veri hacmi | 4.4 kB |
| Tekil görüntülenme | 53 |
| Tekil indirme | 15 |