Dergi makalesi Açık Erişim
Sheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.
{ "DOI": "10.1016/j.spmi.2018.02.002", "abstract": "We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.", "author": [ { "family": "Sheremet", "given": " V." }, { "family": "Gheshlaghi", "given": " N." }, { "family": "Sozen", "given": " M." }, { "family": "Elci", "given": " M." }, { "family": "Sheremet", "given": " N." }, { "family": "Aydinli", "given": " A." }, { "family": "Altuntas", "given": " I." }, { "family": "Ding", "given": " K." }, { "family": "Avrutin", "given": " V." }, { "family": "Ozgur", "given": " U." }, { "family": "Morkoc", "given": " H." } ], "container_title": "SUPERLATTICES AND MICROSTRUCTURES", "id": "30327", "issued": { "date-parts": [ [ 2018, 1, 1 ] ] }, "page": "253-261", "title": "InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors", "type": "article-journal", "volume": "116" }
Görüntülenme | 43 |
İndirme | 12 |
Veri hacmi | 3.5 kB |
Tekil görüntülenme | 43 |
Tekil indirme | 12 |