Dergi makalesi Açık Erişim
Yedikardes, Beyza; Ordokhani, Fereshteh; Akkan, Nihat; Kurt, Ece; Yavuz, Nilgun Karatepe; Zayim, Esra; Altun, Mustafa
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Yedikardes, Beyza</dc:creator> <dc:creator>Ordokhani, Fereshteh</dc:creator> <dc:creator>Akkan, Nihat</dc:creator> <dc:creator>Kurt, Ece</dc:creator> <dc:creator>Yavuz, Nilgun Karatepe</dc:creator> <dc:creator>Zayim, Esra</dc:creator> <dc:creator>Altun, Mustafa</dc:creator> <dc:date>2021-01-01</dc:date> <dc:description>In recent decades, conjugated polymers have been widely studied in organic electronics to produce low-cost transistors. Additionally, these polymers are doped with inorganic materials in order to improve the transistor performance in terms of mobility, on/off current ratio, and threshold voltage as well as to ease processability. In this study, we use various doping concentrations (0-50% in weight) of tungsten oxide (WO3) in poly(3-hexylthiophene) (P3HT), a well-studied organic semiconductor, to optimize the transistor performance. We treat spin-coated film of the hybrid P3HT:WO3 solution on hexamethyl disilazane (HMDS) as channels of commercial test chips including 20 transistors with their gold electrodes. Compared to using pristine P3HT, the proposed hybrid P3HT:WO3 formula which significantly improves the transistor performance. Almost 105 times larger mobilities, almost 10 times larger on/off current ratios, and nearly 22 V decrease in threshold voltages were achieved. It was also observed that the excess amount of WO3 doping leads to worse mobilities and on/off current ratios.</dc:description> <dc:identifier>https://aperta.ulakbim.gov.trrecord/236006</dc:identifier> <dc:identifier>oai:aperta.ulakbim.gov.tr:236006</dc:identifier> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights> <dc:source>JOURNAL OF ELECTRONIC MATERIALS 50(4) 2466-2475</dc:source> <dc:title>Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> <dc:type>publication-article</dc:type> </oai_dc:dc>
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